參數(shù)資料
型號： AP1RA03GMT-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 185 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8
文件頁數(shù)： 3/4頁
文件大?。?/td> 94K
代理商： AP1RA03GMT-HF
AP1RA03GMT-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
40
80
120
160
0.0
1.0
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0
100
200
300
0.0
1.0
2.0
3.0
4.0
5.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0V
6.0V
5.0V
V G = 4.0 V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =20A
V G =10V
0
10
20
30
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
1.2
1.4
1.6
1.8
2
2.2
2.4
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =20A
T C =25
o C
0.0
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
相關(guān)PDF資料
PDF描述
AP20N15GH-HF 20 A, 150 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP2301GN-HF 2.6 A, 20 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
AP2302AGN-HF 4.6 A, 20 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET
AP2304GN-HF 2.7 A, 25 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET
AP2305AGN-HF 3.2 A, 30 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET
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參數(shù)描述
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