參數(shù)資料
型號: AP1R803GMT-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 170 A, 30 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8
文件頁數(shù): 1/4頁
文件大小: 93K
代理商: AP1R803GMT-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ SO-8 Compatible with Heatsink
RDS(ON)
1.9mΩ
▼ Low On-resistance
ID
170A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
EAS
Single Pulse Avalanche Energy
4
mJ
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
25
/W
Data & specifications subject to change without notice
AP1R803GMT-HF
5
Halogen-Free Product
170
Pulsed Drain Current
1
300
Parameter
Rating
Drain-Source Voltage
30
Thermal Data
Parameter
Gate-Source Voltage
+20
Continuous Drain Current
3
43
Continuous Drain Current (Chip)
Continuous Drain Current
3
34
200903043
Total Power Dissipation
83.3
1
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
Total Power Dissipation
28.8
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
S
G
PMPAK 5x6
D
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