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參數(shù)資料
| 型號(hào)： | AP1A3M |
| 廠商： | NEC Corp. |
| 英文描述： | on-chip resistor NPN silicon epitaxial transistor |
| 中文描述： | 片上NPN硅外延電阻晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 84K |
| 代理商： | AP1A3M |
Data Sheet D16171EJ1V0DS
2
AP1 SERIES
AP1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
22 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
200
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
0.7 A
50
Collector saturation voltage
V
CE(sat)
**
I
C
=
0.3 A, I
C
=
6 A
0.28
0.4
V
Low level input voltage
V
IL
**
V
CE
=
5.0 V, I
C
=
100
μ
A
0.3
V
Input resistance
R
1
k
E-to-B resistance
R
2
7
10
13
**PW
≤
350
μ
s, duty cycle
≤
2 %
AP1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
22 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
150
350
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
0.5 A
100
300
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
0.7 A
50
200
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.3 A
0.3
0.4
V
Low level input voltage
V
IL
**
V
CE
=
5.0 V, I
C
=
100
μ
A
0.65
0.3
V
Input resistance
R
1
329
470
611
E-to-B resistance
R
2
3.39
4.7
6.11
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
AP1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
22 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
80
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
0.7 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.2 A
V
CE
=
5.0 V, I
C
=
100
μ
A
0.3
0.4
0.3
V
Low level input voltage
V
IL
**
V
Input resistance
R
1
0.7
1.0
1.3
k
E-to-B resistance
R
2
0.7
1.0
1.3
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
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| AP1A4A | on-chip resistor NPN silicon epitaxial transistor |
| AP1A4M | on-chip resistor NPN silicon epitaxial transistor |
| AP1F3P | on-chip resistor NPN silicon epitaxial transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP1A4A | 制造商:NEC 制造商全稱:NEC 功能描述:on-chip resistor NPN silicon epitaxial transistor |
| AP1A4M | 制造商:NEC 制造商全稱:NEC 功能描述:on-chip resistor NPN silicon epitaxial transistor |
| AP1ANC | 制造商:OMRON AUTOMATION AND SAFETY 功能描述:TERMINAL ENCLOSE SIDEMNT METAL |
| AP1B | 制造商:OMRON INDUSTRIAL AUTOMATION 功能描述:SWITCH |
| AP1-B | 功能描述:基本/快動(dòng)開關(guān) SWITCH RoHS:否 制造商:Omron Electronics 觸點(diǎn)形式:SPDT 執(zhí)行器:Lever 電流額定值:5 A 電壓額定值 AC:250 V 電壓額定值 DC:30 V 功率額定值: 工作力:120 g IP 等級(jí):IP 67 NEMA 額定值: 端接類型:Wire 安裝:Panel |
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