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參數(shù)資料
| 型號(hào)： | AP18P10GM-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 2.7 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 94K |
| 代理商： | AP18P10GM-HF |
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
-100V
▼ Simple Drive Requirement
RDS(ON)
180mΩ
▼ Fast Switching Characteristic
ID
-2.7A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
50
℃
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Continuous Drain Current
3, V
GS @ 10V
-2.1
Pulsed Drain Current
1
-10
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3, V
GS @ 10V
AP18P10GM-HF
Rating
201007221
Halogen-Free Product
1
-100
+20
-2.7
2.5
-55 to 150
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
S
G
D
SO-8
G
D
S
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