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參數(shù)資料
| 型號(hào)： | AP18P10GI |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 100 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | AP18P10GI |
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower On-resistance
BVDSS
-100V
▼ Simple Drive Requirement
RDS(ON)
160mΩ
▼ Fast Switching Characteristic
ID
-12A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
EAS
mJ
IAR
A
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4.0
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
-55 to 150
Linear Derating Factor
31.25
-55 to 150
40
-9
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Avalanche Current
Single Pulse Avalanche Energy
2
Continuous Drain Current, VGS @ 10V
-10
Pulsed Drain Current
1
-48
201022073-1/4
AP18P10GI
Rating
-100
±32
-12
0.25
RoHS-compliant Product
G
D
S
G
D
S
TO-220CFM(I)
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial
-industrial through hole applications.
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