參數(shù)資料
型號(hào): AP13P15GJ-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 13 A, 150 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù): 3/4頁(yè)
文件大小: 100K
代理商: AP13P15GJ-HF
AP13P15GH/J-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
5
10
15
20
25
0
5
10
15
20
25
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G = - 3 .0V
0
5
10
15
20
25
0
5
10
15
20
25
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C = 150
o C
-10V
-7.0V
-5.0V
-4.5V
V G = - 3 .0V
200
600
1000
1400
24
68
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =-7 A
T C =25
0.3
0.8
1.3
1.8
2.3
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D =- 7 A
V G =-10V
0.3
0.7
1.1
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
-
V
GS(
th)
(V)
0
2
4
6
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
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