參數(shù)資料
型號： AP134-501
廠商： SKYWORKS SOLUTIONS INC
元件分類： 放大器
英文描述： 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
文件頁數(shù)： 1/5頁
文件大?。?/td> 78K
代理商： AP134-501
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906 Email sales@skyworksinc.com www.skyworksinc.com
1
Specifications subject to change without notice. 2/02A
Tri-Band HBT Power Amplifier Module
Features
■ 3.2 V Nominal Operating Voltage
■ 50
Internally Matched Input and Output
■ High Power Added Efficiency: 55% for
GSM and 50% for DCS and PCS
■ Small Size: 10 x 8 x 1.6 mm MCM Land
Grid Array Package
■ Low Current Standby Mode: 10
A
■ Integral Band Select and Analog
Power Control
■ GPRS Class 12 Capable
-501
AP134-501
0.394 (10.0 mm)
± 0.004 (0.1 mm)
0.315 (8.0 mm)
± 0.004 (0.1 mm)
SIDE VIEW
TOP VIEW
BOTTOM VIEW
PIN 1
INDICATOR
0.069 (1.75 mm)
± 0.002 (0.051 mm)
0.069 (1.75 mm)
± 0.002 (0.051 mm)
0.082 (2.09 mm)
± 0.002 (0.051 mm)
0.046 (1.18 mm)
± 0.002 (0.051 mm)
0.06 (1.56 mm)
± 0.004 (0.10 mm)
0.04 (1.05 mm)
± 0.002 (0.05 mm)
0.075 (1.91 mm) BSC
0.075
(1.91 mm)
BSC
MOLD CAP
16
1
Description
The AP134-501 is a high performance power amplifier
module designed for use as the final amplification stage
in tri-band GSM and GPRS mobile phone applications
(880–915, 1710–1785 and 1850–1910 MHz). It features
3-cell battery operation optimized for today’s lithium
polymer batteries, a band select switch, a single positive
analog power control input for all three bands, exceptional
power added efficiency, and a very well behaved power
control response maximizing ease-of-use. The AP134-501
also incorporates an advanced silicon bipolar power
control ASIC providing an outstandingly smooth and flat
power control response, greatly improving the ease of use.
The amplifier IC’s are manufactured on an advanced
InGaP HBT process, known industry-wide for its excellent
reliability, ruggedness and performance. The amplifier
module is completely self-contained, requiring no external
matching components, and packaged in a small land grid
array package.
Parameter
Condition
Min.
Typ.
Max.
Unit
Supply Voltage
2.8
3.2
4.2
V
Leakage Current
No RF Input Power
10
30
A
Band Select Voltage
GSM
0
0.5
V
DCS/PCS
2.0
2.8
V
Band Select Current
1.0
mA
Power Control Voltage
0.1
1.9
V
Power Control Current
1.0
mA
DC Specifications
Characteristic
Value
Supply Voltage VCC, Standby
6.5 V
Mode, VAPC < 0.3, No RF Input Power
Power Control Voltage
2 V
Band Select Voltage
4 V
Input Power (CW)
15 dBm
Operating Case Temperature
-35 to +85°C
Storage Temperature
-45 to 120°C
Absolute Maximum Ratings
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