參數(shù)資料
型號(hào)： AP10N70R-A
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 10 A, 650 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝： ROHS COMPLIANT, TO-262, 3 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 189K
代理商： AP10N70R-A
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1.0mA
650
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.0A
-
0.6
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
5
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=600V, VGS=0V
-
10
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=480V, VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
3
ID=10A
-
35.9
57
nC
Qgs
Gate-Source Charge
VDS=480V
-
8.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
11.5
-
nC
td(on)
Turn-on Delay Time
3
VDD=300V
-
14.9
-
ns
tr
Rise Time
ID=10A
-
19.7
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
51.7
-
ns
tf
Fall Time
RD=30Ω
-
23.3
-
ns
Ciss
Input Capacitance
VGS=0V
-
1950 3120
pF
Coss
Output Capacitance
VDS=15V
-
630
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
20
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
3
Tj=25℃, IS=10A, VGS=0V
-
1.5
V
trr
Reverse Recovery Time
3
IS=10A, VGS=0V,
-
575
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
10.6
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25
oC , V
DD=50V , L=1.0mH , RG=25Ω , IAS=10A.
3.Pulse test
AP10N70R/P-A
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
±100
± 30V
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參數(shù)描述
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AP10P10GK-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP10P332 功能描述:通用繼電器 RELAY VACUUM SPST RoHS:否 制造商:Omron Electronics 觸點(diǎn)形式:1 Form A (SPST-NO) 觸點(diǎn)電流額定值:150 A 線圈電壓:24 VDC 線圈電阻:144 Ohms 線圈電流:167 mA 切換電壓:400 V 安裝風(fēng)格:Chassis 觸點(diǎn)材料:
AP10P334 功能描述:通用繼電器 RELAY VACUUM SPST L RoHS:否 制造商:Omron Electronics 觸點(diǎn)形式:1 Form A (SPST-NO) 觸點(diǎn)電流額定值:150 A 線圈電壓:24 VDC 線圈電阻:144 Ohms 線圈電流:167 mA 切換電壓:400 V 安裝風(fēng)格:Chassis 觸點(diǎn)材料:
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