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參數(shù)資料
| 型號： | AP1045A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 2.4~2.5 GHz High Power Amplifier |
| 中文描述： | 2.4?2.5 GHz的高功率放大器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 286K |
| 代理商： | AP1045A |
AP1045A
1 of 6
2.4~2.5 GHz High Power Amplifier
2004.12.20
A
For more information,please contact us at:
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
2003 RF Integrated Corporation. All rights reserved.
RF integrated Corp. reserved the right to make any changes to the specifications without notice.
AP1045A is a linear, two-stages power amplifier
MMIC with high output power in 2.4GHz band utilizing
InGaP/GaAs HBT process. With the excellent linearity
performance, the device delivers 20dBm output
power under 54Mbps OFDM (IEEE802.11g)
modulation, with 3% EVM at 3.3V. It can also deliver
22.5dBm 11g linear power at 5V. The PA also
includes on-chip power detector, providing a DC
voltage proportional to the output power of device.
The AP1045A is housed in a 3 x 3(mm), 16 pin, QFN
leadless package.
Major Applications
IEEE 802.11b/g
Wireless LAN Systems
2.4 GHz ISM Band Application
Suitable for high power WLAN applications
Pin Details
Functional Block Diagram
Ground
GND
Pkg Base
No contact
NC
16
No contact
NC
15
Power supply input
Vcc
14
Power supply input
Vcc
13
RF output
RF_OUT
12
RF output
RF_OUT
11
RF output
RF_OUT
10
No contact
NC
9
No contact
NC
8
Ground
GND
7
Second stage Bias
Vb2
6
First stage Bias
Vb1
5
Detector Output
Dect_Out
4
Bias Ckt Voltage
Bias_Vcc
3
Ground
GND
2
RF input
RF_IN
1
Description
Name
Pin Number
QFN-16pin, 3x3 (mm)
High Power:
20dBm 11g linear power at 3.3V
22.5dBm 11g linear power at 5V
High Gain:
30.5dB Gain at 3.3V, Pout=20dBm
Detector
1
2
3
4
5
6
7
8
9
10
11
12
16
15
14
13
Bias
RF_IN
GND
Bias_Vcc
Dect_Out
Vb1
Vb2
GND
NC
NC
RF_OUT
RF_OUT
RF_OUT
Vcc
Vcc
NC
NC
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