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參數(shù)資料
| 型號(hào)： | AP1004CMX |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 32 A, 25 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, GREENFET PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 127K |
| 代理商： | AP1004CMX |
AP1004CMX
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
40
80
120
160
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0
40
80
120
160
200
240
0.0
1.0
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0.4
0.8
1.2
1.6
2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =32A
V G =10V
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
1
1.4
1.8
2.2
2.6
3
246
8
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =25A
T A =25
o C
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j ,Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
I D =50mA
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