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參數(shù)資料
| 型號： | AP1003BST |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 17.3 A, 30 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, GREENFET PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 160K |
| 代理商： | AP1003BST |
AP1003BST
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
20
40
60
80
012
345
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T A =150
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0
20
40
60
80
100
120
01
23
45
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T A =25
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0.4
0.8
1.2
1.6
2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
ormalize
dR
DS(ON)
I D =13A
V G =10V
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I S
(A
)
T j =25
o C
T j =150
o C
3.2
3.6
4
4.4
4.8
5.2
5.6
6
2468
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
)
I D =11A
T A =25 ℃
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j ,Junction Temperature (
o C)
N
ormalize
dV
GS(t
h)
(V
)
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