參數(shù)資料
型號: AP1002BMX
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 32 A, 30 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN AND LEAD FREE, GREENFET PACKAGE-3
文件頁數(shù): 4/4頁
文件大?。?/td> 110K
代理商: AP1002BMX
AP1002BMX
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
Rthja = 45℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
2
4
6
8
10
0
10
203040
5060
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =25A
0
1000
2000
3000
4000
5000
6000
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
Q
VG
4.5V
QGS
QGD
QG
Charge
td(on) tr
td(off) tf
VDS
VGS
10%
90%
V DS =15V
V DS =18V
V DS =24V
Operation in this area
limited by RDS(ON)
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