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參數(shù)資料
| 型號： | AP09N90CW-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 7.6 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | AP09N90CW-HF |
AP09N90CW-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j = 150
o CT
j = 25
o C
1
2
3
4
-50
0
50
100
150
T j , Junction Temperature (
o C)
V
GS(t
h)
(V
)
0
1
2
3
4
5
02468
10
12
14
16
18
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
V G =4.0V
10V
7.0V
5.0V
4.5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
V G =10V
I D =3.6A
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
0
2
4
6
8
10
02468
10
12
14
16
18
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
V G =4.0V
4.5V
10V
7.0V
5.0V
T C =25
o C
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