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參數資料
| 型號： | AP09N70R-H |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 8.3 A, 700 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, TO-262, 3 PIN |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 64K |
| 代理商： | AP09N70R-H |
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
AP09N70P/R-H
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
0
2
4
6
8
10
036
9
12
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
6.0V
5.0V
4.5V
4.0V
V G = 3 .5 V
0
1
2
3
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
R
DS(ON)
I D =4A
V G =10V
0
2
4
6
8
10
0
5
10
15
20
25
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
6.0V
5.0V
4.5V
4.0V
V G = 3 .5 V
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j = 150
o C
T j = 25
o C
1
2
3
4
5
-50
0
50
100
150
T j , Junction Temperature (
o C)
V
GS(t
h)
(V
)
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