參數(shù)資料
型號(hào): AP09N20J-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 8.6 A, 200 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 216K
代理商: AP09N20J-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
200V
▼ Low On-resistance
RDS(ON)
380mΩ
▼ Fast Switching Characteristics
ID
8.6A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
W/℃
EAS
Single Pulse Avalanche Energy
2
mJ
IAR
Avalanche Current
A
TSTG
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1.8
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data & specifications subject to change without notice
200809112
Halogen-Free Product
AP09N20H/J-HF
40
-55 to 150
Parameter
8.6
+30
8.6
5.5
Parameter
Rating
200
1
Storage Temperature Range
-55 to 150
36
69
Linear Derating Factor
0.55
G
D S
TO-251(J)
G
D
S
TO-252(H)
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
The through-hole version (AP09N20J) is available for low-profile
applications.
G
D
S
相關(guān)PDF資料
PDF描述
AP09N20H-HF 8.6 A, 200 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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