參數(shù)資料
型號(hào)： AP0803GMP-HF
廠(chǎng)商： ADVANCED POWER ELECTRONICS CORP
元件分類(lèi)： JFETs
英文描述： 44 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT, EFSOP-8
文件頁(yè)數(shù)： 3/4頁(yè)
文件大?。?/td> 97K
代理商： AP0803GMP-HF
AP0803GMP-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
20
40
60
80
100
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0
40
80
120
160
02
46
8
10
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0V
6.0V
5.0V
V G = 4.0 V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =20A
V G =10V
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
7
8
9
10
11
12
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =20A
T C =25
o C
0.0
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
I D =250uA
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