參數(shù)資料
型號： AP05N50S-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 95K
代理商： AP05N50S-HF
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
500
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2.7A
-
1.4
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2.7A
-
2.4
-
S
IDSS
Drain-Source Leakage Current
VDS=500V, VGS=0V
-
25
uA
Drain-Source Leakage Current (Tj=125
oC) VDS=400V, VGS=0V
-
250
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
3
ID=3.1A
-
19
30
nC
Qgs
Gate-Source Charge
VDS=400V
-
4.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6.3
-
nC
td(on)
Turn-on Delay Time
3
VDD=250V
-
11
-
ns
tr
Rise Time
ID=3.1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=12Ω,VGS=10V
-
32
-
ns
tf
Fall Time
RD=80.6Ω
-10
-
ns
Ciss
Input Capacitance
VGS=0V
-
985
1580
pF
Coss
Output Capacitance
VDS=25V
-
85
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
3.3
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.5
3.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
3
IS=4.5A, VGS=0V
-
1.5
V
trr
Reverse Recovery Time
3
IS=3.1A, VGS=0V,
-
300
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
2.6
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25
oC , V
DD=50V , L=10mH , RG=25Ω , IAS=3A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP05N50S-HF
4.Surface mounted on 1 in
2 copper pad of FR4 board
相關PDF資料
PDF描述
AP0603GH-HF 72 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP07N70CI-H 7 A, 700 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP08N60I-HF 8 A, 600 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP0903GH 51 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP0903GM 13.3 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
AP05YC104KQB2A 功能描述:多層陶瓷電容器MLCC - SMD/SMT 16volts 0.01uF 10% X7R RoHS:否 制造商:Johanson Dielectrics 電容:2.2 uF 容差:10 % 電壓額定值:10 V 溫度系數(shù)/代碼: 外殼代碼 - in:0603 外殼代碼 - mm:1608 工作溫度范圍:- 55 C to + 85 C 產品: 封裝:Reel
AP05YC105KQB2A 功能描述:多層陶瓷電容器MLCC - SMD/SMT 16volts 1uF 10% X7R RoHS:否 制造商:Johanson Dielectrics 電容:2.2 uF 容差:10 % 電壓額定值:10 V 溫度系數(shù)/代碼: 外殼代碼 - in:0603 外殼代碼 - mm:1608 工作溫度范圍:- 55 C to + 85 C 產品: 封裝:Reel
AP05ZC104KQB2A 功能描述:多層陶瓷電容器MLCC - SMD/SMT 10volts 0.01uF 10% X7R RoHS:否 制造商:Johanson Dielectrics 電容:2.2 uF 容差:10 % 電壓額定值:10 V 溫度系數(shù)/代碼: 外殼代碼 - in:0603 外殼代碼 - mm:1608 工作溫度范圍:- 55 C to + 85 C 產品: 封裝:Reel
AP05ZC105KQB2A 功能描述:多層陶瓷電容器MLCC - SMD/SMT 10volts 1uF 10% X7R RoHS:否 制造商:Johanson Dielectrics 電容:2.2 uF 容差:10 % 電壓額定值:10 V 溫度系數(shù)/代碼: 外殼代碼 - in:0603 外殼代碼 - mm:1608 工作溫度范圍:- 55 C to + 85 C 產品: 封裝:Reel
AP-060074-13LF 功能描述:汽車連接器 28W HEADER ASSY CODE-A RoHS:否 制造商:Amphenol SINE Systems 產品:Contacts 系列:ATP 位置數(shù)量: 型式:Female 安裝風格: 端接類型: 觸點電鍍:Nickel
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*