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參數(shù)資料
| 型號(hào)： | AP02N60H-H |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 1.4 A, 700 V, 8.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 246K |
| 代理商： | AP02N60H-H |
AP02N60H/J-H
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
0
1
2
3
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
R
DS(ON)
I D =0.6A
V G =10V
0
0.5
1
1.5
0
5
10
15
20
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
6.0V
5.5V
5.0V
V G = 4.5 V
0
0.3
0.6
0.9
0
5
10
15
20
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
6.0V
5.5V
5.0V
V G = 4.5 V
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j = 150
o C
T j = 25
o C
1
2
3
4
5
-50
0
50
100
150
T j , Junction Temperature (
o C )
V
GS(t
h)
(V
)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP02N60I | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
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| AP02N60J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP02N60J_08 | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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