參數(shù)資料
型號(hào)： AP01L60AT
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： 小信號(hào)晶體管
英文描述： 160 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 2/5頁
文件大小： 105K
代理商： AP01L60AT
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
600
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.8
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=0.5A
-
12
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=0.5A
-
0.8
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=600V, VGS=0V
-
10
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=480V, VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
2
ID=0.1A
-
6.0
10
nC
Qgs
Gate-Source Charge
VDS=480V
-
1.0
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2.5
-
nC
td(on)
Turn-on Delay Time
2
VDD=300V
-
6.6
-
ns
tr
Rise Time
ID=1A
-
5.0
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
11.7
-
ns
tf
Fall Time
RD=300Ω
-
9.2
-
ns
Ciss
Input Capacitance
VGS=0V
-
170
270
pF
Coss
Output Capacitance
VDS=25V
-
30.7
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
5.1
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.2V
-
160
mA
VSD
Forward On Voltage
2
IS=160mA, VGS=0V
-
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP01L60AT
± 30V
±100
相關(guān)PDF資料
PDF描述
AP0203GMT-HF 38 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET
AP02N60I-A 2 A, 650 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP02N60T-H-HF 300 mA, 700 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
AP03LZ 2000 MHz - 2300 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.2 dB INSERTION LOSS-MAX
AP03L 2000 MHz - 2300 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.2 dB INSERTION LOSS-MAX
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP01L60AT_10 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
AP01L60H 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP01L60H_10 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP01L60H-H 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:100% Avalanche Rated, Fast Switching Speed
AP01L60H-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:100% Avalanche Test, Fast Switching Characteristics
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*