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參數(shù)資料
| 型號(hào)： | AOD404L |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 156K |
| 代理商： | AOD404L |
AOD404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
5
10
15
20
25
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
G
0
500
1000
1500
2000
2500
3000
3500
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
P
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
J
T
C
oss
C
rss
0.1
1
10
100
1000
0.1
1
10
100
V
(Volts)
I
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
μ
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
V
DS
=15V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=50°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
10
μ
s
Alpha & Omega Semiconductor, Ltd.
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| AOD406L | N-Channel Enhancement Mode Field Effect Transistor |
| AOD407 | P-Channel Enhancement Mode Field Effect Transistor |
| AOD407L | P-Channel Enhancement Mode Field Effect Transistor |
| AOD408 | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AOD405 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| AOD405L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| AOD406 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD406_08 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD406L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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