參數(shù)資料
型號: AOB434
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場效應(yīng)管
文件頁數(shù): 4/5頁
文件大?。?/td> 151K
代理商: AOB434
AOB434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
5
10
15
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
G
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
5
10
V
DS
(Volts)
15
20
25
Figure 8: Capacitance Characteristics
C
C
iss
0
0.0001
40
80
120
160
200
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
P
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
J
T
C
oss
C
rss
0.1
1.0
10.0
100.0
1000.0
0.1
1
10
100
V
DS
(Volts)
I
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
μ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C, T
A
=25°C
V
DS
=12.5V
I
D
=30A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θ
JC
.R
θ
JC
R
θ
JC
=3°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
A
=25°C
10
μ
s
Alpha & Omega Semiconductor, Ltd.
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