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參數(shù)資料
| 型號(hào)： | AOB428L |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 129K |
| 代理商： | AOB428L |
AOB428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
2
2.5
3
3.5
4
4.5
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(
10
20
30
40
0
10
20
30
40
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
N
V
GS
=6V,20A
V
=10V, 20A
20
30
40
50
60
4
8
12
16
20
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
)
25°C
125°C
V
DS
=5V
V
GS
=6V
V
GS
=10V
I
D
=20A
25°C
125°C
0
20
40
60
80
100
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
V
GS
=4.5V
6V
10V
5V
Alpha & Omega Semiconductor, Ltd.
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