參數(shù)資料
型號(hào): AO8846
廠商: ALPHA
英文描述: Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 常見的漏雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 3/4頁(yè)
文件大小: 214K
代理商: AO8846
AO8846
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
I
F
=-6.5A, dI/dt=100A/
μ
s
6
8
THIS P25
CR
OUT OF15
FUNCTIONS AND RELIABILITY WITHOUT -40°C
0
5
10
15
20
25
0
0.5
1
1.5
2
2.5
3
V
DS
(Volts)
Figure 1: On-Region Characteristics
I
D
2.5V
4.5V
3.1V
0
5
10
15
20
25
0
0.4
0.8
1.2
1.6
2
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(
25°C
125°C
V
DS
= 5V
-40°C
15
17
19
21
23
0
2
4
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
)
V
GS
= 4.5V
V
GS
= 2.5V
V
GS
= 3.1V
V
GS
= 4.0V
V
GS
= 1.8V
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
125°C
0.7
0.9
1.1
1.3
1.5
-50
-25
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
N
V
GS
= 4.5V
I
D
= 7A
V
GS
= 1.8V
I
D
= 6A
V
GS
= 2.5V
I
D
= 6.5A
5
35
45
55
1
2
3
4
5
6
7
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
)
I
D
= 7.0A
25°C
125°C
V
GS
=1.5V
1.8V
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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