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參數(shù)資料
| 型號： | AO8830 |
| 廠商： | ALPHA |
| 英文描述： | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 常見的漏雙N溝道增強型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 122K |
| 代理商： | AO8830 |
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
64
115
70
Max
83
140
85
R
θ
JL
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
±12
6
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Drain-Source Voltage
20
Maximum
Units
V
V
Parameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
4.8
30
1.5
0.94
Power Dissipation
A
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
A
P
D
°C
-55 to 150
I
D
AO8830
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 6 A (V
GS
= 10V)
R
DS(ON)
< 27m
(V
GS
= 10V)
R
DS(ON)
< 30m
(V
GS
= 4.5V)
R
DS(ON)
< 41m
(V
GS
= 2.5V)
R
DS(ON)
< 55m
(V
GS
= 1.8V)
ESD Rating: 2000V HBM
G1
S1
S1
D1/D2
G2
S2
S2
D1/D2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
General Description
The AO8830 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration.
Standard Product AO8830 is Pb-
free (meets ROHS & Sony 259 specifications).
AO8830L is a Green Product ordering option.
AO8830 and AO8830L are electrically identical.
D1
S1
D2
G1
1.6K
S2
G2
1.6K
Alpha & Omega Semiconductor, Ltd.
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|---|---|
| AO8830_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
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| AO9926 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO9926A | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
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