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參數(shù)資料
| 型號： | AO7415 |
| 廠商： | ALPHA |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -溝道增強型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 116K |
| 代理商： | AO7415 |
AO7415
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-20
V
-0.5
-2.5
±1
±10
-1.4
T
J
=55°C
μ
A
μ
A
V
GS(th)
I
D(ON)
-0.7
-15
-0.9
V
A
80
115
98
130
5
-0.84
100
T
J
=125°C
125
170
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
-0.95
0.6
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
512
77
62
9.2
620
pF
pF
pF
13
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
4.9
3.5
3.7
11
8
34
12
13
4
6
nC
nC
nC
ns
ns
ns
ns
13
10
41
15
17
6
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-2A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
=-2.5V, I
D
=-1.0A
V
DS
=-5V, I
D
=-2A
V
GS
=-10V, I
D
=-2A
Reverse Transfer Capacitance
Gate resistance
I
F
=-2A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-10V, f=1MHz
I
GSS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Zero Gate Voltage Drain Current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=-4.5V, I
D
=-1.3A
I
S
=-1A,V
GS
=0V
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-4.5V, V
DS
=-10V, R
L
=5
,
R
GEN
=3
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-4.5V, V
DS
=-10V, I
D
=-2A
Input Capacitance
Output Capacitance
Turn-On DelayTime
On state drain current
V
GS
=-4.5V, V
DS
=-5V
Gate-Body leakage current
V
DS
=0V, V
GS
=±10V
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=-250
μ
A
Gate Threshold Voltage
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev2: August 2005
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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