參數(shù)資料
型號: AO7410L
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場效應(yīng)管
文件頁數(shù): 1/4頁
文件大小: 114K
代理商: AO7410L
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
300
340
280
Max
360
425
320
R
θ
JL
Junction and Storage Temperature Range
A
P
D
°C
0.35
0.22
-55 to 150
T
A
=70°C
I
D
1.6
1.3
10
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum
30
Units
V
V
Parameter
Drain-Source Voltage
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±12
Gate-Source Voltage
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
t
10s
R
θ
JA
AO7410
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 1.6 A (V
GS
= 10V)
R
DS(ON)
< 90m
(V
GS
= 10V)
R
DS(ON)
< 100m
(V
GS
= 4.5V)
R
DS(ON)
< 175m
(V
GS
= 2.5V)
General Description
The AO7410 uses advanced trench technology to
provide excellent R
DS(ON)
, very low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO7410 is Pb-free
(meets ROHS & Sony 259 specifications). AO7410L
is a Green Product ordering option. AO7410 and
AO7410L are electrically identical.
G
D
S
S
G
D
SC-70
(SOT-323)
Top View
Alpha & Omega Semiconductor, Ltd.
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