參數(shù)資料
型號(hào): AO4815
廠商: ALPHA
英文描述: Dual P-Channel Enhancement Mode Field Effect Transistor
中文描述: 雙P溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁數(shù): 1/4頁
文件大?。?/td> 115K
代理商: AO4815
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
50
73
31
Max
62.5
110
40
R
θ
JL
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
±25
-8
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Drain-Source Voltage
-30
Maximum
Units
V
V
Parameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
-6.9
-40
2
1.44
Power Dissipation
A
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
A
P
D
°C
-55 to 150
I
D
AO4815
Dual P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -8A (V
GS
= -20V)
R
DS(ON)
< 18m
(V
GS
= -20V)
R
DS(ON)
< 20m
(V
GS
= -10V)
ESD Rating: 2KV HBM
General Description
The AO4815 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected.
Standard Product AO4815
is Pb-free (meets ROHS & Sony 259 specifications).
AO4815L is a Green Product ordering option.
AO4815 and AO4815L are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
D1
S1
G1
D2
S2
G2
Alpha & Omega Semiconductor, Ltd.
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