參數(shù)資料
型號(hào): AO4802
廠商: ALPHA
英文描述: Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 118K
代理商: AO4802
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
48
74
35
Max
62.5
110
40
R
θ
JL
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Maximum
30
±12
7
Units
V
V
A
T
A
=70°C
6
40
2
Pulsed Drain Current
B
T
A
=25°C
I
D
T
A
=70°C
1.44
W
Power Dissipation
Junction and Storage Temperature Range
T
A
=25°C
P
D
Steady-State
Steady-State
°C/W
°C/W
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Units
°C/W
t
10s
R
θ
JA
AO4802, AO4802L ( Green Product )
Dual N-Channel Enhancement Mode Field Effect Transistor
Rev 2: Nov 2004
Features
V
DS
(V) = 30V
I
D
= 7A
R
DS(ON)
< 26m
(V
GS
= 10V)
R
DS(ON)
< 30m
(V
GS
= 4.5V)
R
DS(ON)
< 40m
(V
GS
= 2.5V)
R
DS(ON)
< 70m
(V
GS
= 1.8V)
General Description
The AO4802 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. They
offer operation over a wide gate drive range from 1.8V
to 12V. The two devices may be used individually, in
parallel or to form a bidirectional blocking switch.
AO4802L ( Green Product ) is offered in a lead-free
package.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
G1
D1
S1
G2
D2
S2
SOIC-8
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AO4802L Dual N-Channel Enhancement Mode Field Effect Transistor
AO4803 Dual P-Channel Enhancement Mode Field Effect Transistor
AO4803L Dual P-Channel Enhancement Mode Field Effect Transistor
AO4805 Dual P-Channel Enhancement Mode Field Effect Transistor
AO4806 Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AO4802L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
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