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參數(shù)資料
| 型號： | AO4600L |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 521K |
| 代理商： | AO4600L |
AO4600
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
-0.7
-1
-1.4
V
ID(ON)
-25
A
42.5
49
TJ=125°C
74
54
64
m
80
120
m
gFS
711
S
VSD
-0.75
-1
V
IS
-3
A
Ciss
952
1200
pF
Coss
103
pF
Crss
77
pF
Rg
5.9
30
Qg
9.5
12
nC
Qgs
2nC
Qgd
3.1
nC
tD(on)
12
ns
tr
4ns
tD(off)
37
ns
tf
12
ns
trr
21
26
ns
Qrr
13
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
ID=-250A, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
A
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS ID=-250A
On state drain current
VGS=-4.5V, VDS=-5V
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-5A
m
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=-4.5V, VDS=-15V, ID=-5A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=-10V, VDS=-15V, RL=3,
RGEN=6
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=-5A, dI/dt=100A/s
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/s
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Rev 4 : Sept 2005
Alpha & Omega Semiconductor, Ltd.
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