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參數(shù)資料
| 型號： | AO4600 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOIC-8 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 521K |
| 代理商： | AO4600 |
AO4600
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
0.7
1
1.4
V
ID(ON)
25
A
22.6
27
TJ=125°C
33
40
27
32
m
42
50
m
gFS
12
16
S
VSD
0.71
1
V
IS
3A
Ciss
858
1050
pF
Coss
110
pF
Crss
80
pF
Rg
1.4
2
Qg
9.6
12
nC
Qgs
1.65
nC
Qgd
3nC
tD(on)
5.7
ns
tr
13
ns
tD(off)
37
ns
tf
4.2
ns
trr
Body Diode Reverse Recovery time
15.5
20
ns
Qrr
Body Diode Reverse Recovery charge
7.9
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=15V, ID=6.9A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=15V, RL=2.2,
RGEN=6
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Forward Transconductance
VDS=5V, ID=5A
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=6.9A
m
VGS=4.5V, ID=6.0A
VGS=2.5V, ID=5A
Gate Threshold Voltage
VDS=VGS ID=250A
On state drain current
VGS=4.5V, VDS=5V
VDS=24V, VGS=0V
A
Gate-Body leakage current
VDS=0V, VGS=±12V
IF=5A, dI/dt=100A/s
n-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
ID=250A, VGS=0V
IDSS
Zero Gate Voltage Drain Current
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
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