參數(shù)資料
型號： AO4441L
廠商： ALPHA
元件分類： MOSFETs
英文描述： P-Channel Enhancement Mode Field Effect Transistor
中文描述： 的P -溝道增強型場效應(yīng)晶體管
文件頁數(shù)： 2/4頁
文件大?。?/td> 159K
代理商： AO4441L
AO4441
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-60
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3
nA
V
A
-1
-20
-2.1
80
130
102
10
-0.77
100
T
J
=125°C
130
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
S
V
A
-1
-4
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge (10V)
930
85
35
7.2
1120
pF
pF
pF
9
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
16
8
2.5
3.2
8
3.8
31.5
7.5
27
32
20
10
nC
nC
nC
nC
ns
ns
ns
ns
35
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Rev 1: Sept 2005
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-48V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
μ
A
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-4A
m
V
GS
=-4.5V, I
D
=-3A
V
DS
=-5V, I
D
=-4A
I
S
=-1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=-30V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-30V, I
D
=-4A
V
GS
=-10V, V
DS
=-30V, R
L
=7.5
,
R
GEN
=3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-4A, dI/dt=100A/
μ
s
I
F
=-4A, dI/dt=100A/
μ
s
value in any ien application depends on the user's specific board design. The current rating is based on the t
≤
SOA curve provides a single pulse rating.
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on th 10s thermal resistance
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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