- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375331 > AO4437L (ALPHA) P-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號： | AO4437L |
| 廠商： | ALPHA |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 119K |
| 代理商： | AO4437L |
AO4437
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-12
V
-1
-5
±1
±10
-1
T
J
=55°C
μ
A
μ
A
V
GS(th)
I
D(ON)
-0.3
-20
-0.55
A
12.4
17
15.9
20.4
38
-0.74
16
21
20
25
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
-1
-4.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
3960
910
757
6.9
4750
pF
pF
pF
8.5
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
37
4.5
11
15
43
158
95
64
50
47
nC
nC
nC
ns
ns
ns
ns
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-11A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-9.6V, V
GS
=0V
V
GS
=-1.8V, I
D
=-6A
V
DS
=-5V, I
D
=-11A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-11A
Reverse Transfer Capacitance
Gate resistance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
μ
A
V
DS
=0V, V
GS
=±8V
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=±4.5V
I
GSS
m
V
GS
=-2.5V, I
D
=-10A
I
S
=-1A,V
GS
=0V
I
F
=-11A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-6V, f=1MHz
V
GS
=-4.5V, V
DS
=-6V, I
D
=-11A
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
GS
=-4.5V, V
DS
=-6V, R
L
=0.55
,
R
GEN
=3
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Gate-Body leakage current
V
GS
=0V, V
DS
=0V, f=1MHz
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev2: August 2005
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO4438 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4438L | N-Channel Enhancement Mode Field Effect Transistor |
| AO4440 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4440L | N-Channel Enhancement Mode Field Effect Transistor |
| AO4441 | P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4438 | 功能描述:MOSFET N-CH 60V 8.2A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4438_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:60V N-Channel MOSFET |
| AO4438_101 | 功能描述:MOSFET N-CHANNEL 60V 8.2A 8SO 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時）:8.2A（Ta） 驅(qū)動電壓（最大 Rds On，最小 Rds On）:4.5V，10V 不同 Id 時的 Vgs（th）（最大值）:3V @ 250μA 不同 Vgs 時的柵極電荷?（Qg）（最大值）:30nC @ 4.5V Vgs（最大值）:±20V 不同 Vds 時的輸入電容（Ciss）（最大值）:2300pF @ 30V FET 功能:- 功率耗散（最大值）:3.1W（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:22 毫歐 @ 8.2A，10V 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 供應(yīng)商器件封裝:8-SO 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 標(biāo)準(zhǔn)包裝:3,000 |
| AO4438L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO4440 | 功能描述:MOSFET N-CH 60V 5A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。