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參數(shù)資料
| 型號： | AO4425 |
| 廠商： | ALPHA |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -溝道增強型場效應晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 115K |
| 代理商： | AO4425 |
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
26
50
14
Max
40
75
24
R
θ
JL
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
±25
-14
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Drain-Source Voltage
-38
Maximum
Units
V
V
Parameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
-11
-50
3.1
2
Power Dissipation
A
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
A
P
D
°C
-55 to 150
I
D
AO4425
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -38V
I
D
= -14A (V
GS
= -20V)
R
DS(ON)
< 10m
(V
GS
= -20V)
R
DS(ON)
< 11m
(V
GS
= -10V)
ESD Rating: 4000V HBM
General Description
The AO4425 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. It is
ESD protected.
Standard Product AO4425 is Pb-free
(meets ROHS & Sony 259 specifications). AO4425L
is a Green Product ordering option. AO4425 and
AO4425L are electrically identical.
SOIC-8
Top View
G
S
S
S
D
D
D
D
D
S
G
Alpha & Omega Semiconductor, Ltd.
相關PDF資料 |
PDF描述 |
|---|---|
| AO4425L | P-Channel Enhancement Mode Field Effect Transistor |
| AO4427 | P-Channel Enhancement Mode Field Effect Transistor |
| AO4427L | P-Channel Enhancement Mode Field Effect Transistor |
| AO4429 | P-Channel Enhancement Mode Field Effect Transistor |
| AO4429L | P-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AO4425_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:38V P-Channel MOSFET |
| AO4425L | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AO4427 | 功能描述:MOSFET P-CH -30V -12.5A 8-SOIC RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| AO4427_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4427L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
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