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參數(shù)資料
| 型號： | AO4420 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 165K |
| 代理商： | AO4420 |
AO4420
Symbol
Min
Typ
Max
Units
BVDSS
30
V
0.004
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
0.6
1.1
2
V
ID(ON)
40
A
8.3
10.5
TJ=125°C
12.5
15
9.7
12
m
gFS
30
37
S
VSD
0.76
1
V
IS
5
A
DYNAMIC PARAMETERS
Ciss
3656
4050
pF
Coss
256
pF
Crss
168
pF
Rg
0.86
1.1
SWITCHING PARAMETERS
Qg(4.5V)
30.5
36
nC
Qgs
4.6
nC
Qgd
8.6
nC
tD(on)
5.5
9
ns
tr
3.4
7
ns
tD(off)
49.8
75
ns
tf
5.9
11
ns
trr
22.5
28
ns
Qrr
12.5
16
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate Drain Charge
Body Diode Reverse Recovery Charge IF=13.7A, dI/dt=100A/s
VGS=0V, VDS=0V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.1,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Total Gate Charge
Input Capacitance
IF=13.7A, dI/dt=100A/s
On state drain current
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
VGS=4.5V, VDS=5V
Turn-On DelayTime
VGS=4.5V, VDS=15V, ID=13.7A
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
A
Gate Threshold Voltage
Drain-Source Breakdown Voltage
ID=250A, VGS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
VDS=VGS ID=250A
VDS=24V, VGS=0V
VDS=0V, VGS= ±12V
RDS(ON)
Static Drain-Source On-Resistance
m
VGS=4.5V, ID=12.7A
VGS=10V, ID=13.7A
Gate Source Charge
Gate resistance
Reverse Transfer Capacitance
VDS=5V, ID=13.7A
Output Capacitance
Maximum Body-Diode Continuous Current
VGS=0V, VDS=15V, f=1MHz
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Rev 8 : Nov 2010
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4420A | 功能描述:MOSFET N CH 30V 13.7A SOIC 8 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4420A_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO4420L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO4421 | 功能描述:MOSFET P-CH -60V -6.2A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4421_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:60V P-Channel MOSFET |
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