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參數(shù)資料
| 型號： | AO4413AL |
| 廠商： | ALPHA |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -溝道增強型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 116K |
| 代理商： | AO4413AL |
AO4413A
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3.5
nA
V
A
-1.5
-60
-2.2
5.5
7
T
J
=125°C
8.7
8.5
6.6
8.2
48
-0.72
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
-1
5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
4245
983
689
12
5500
pF
pF
pF
18
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
69
15.2
18.8
16.5
23.5
116
82
59
55
90
nC
nC
nC
ns
ns
ns
ns
77
ns
nC
-15
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-15A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-20V, I
D
=-15A
Reverse Transfer Capacitance
Gate resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
μ
A
V
DS
=0V, V
GS
=±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Static Drain-Source On-Resistance
R
DS(ON)
m
V
GS
=-10V, I
D
=-15A
V
GS
=-6V, I
D
=-10A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-15A
I
F
=-15A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=-10V, V
DS
=-15V, I
D
=-15A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=1.0
,
R
GEN
=3
V
GS
=0V, V
DS
=0V, f=1MHz
Input Capacitance
Output Capacitance
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
F. Rev 0: July 2005
≤
10s thermal resistance rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
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