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參數(shù)資料
| 型號： | AO4407A |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 186K |
| 代理商： | AO4407A |
AO4407A
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
-1
TJ = 55°C
-5
IGSS
±100
nA
VGS(th)
-1.7
-2.3
-3
V
ID(ON)
-60
A
8.5
11
TJ=125°C
11.5
15
10
13
12.7
17
gFS
21
S
VSD
-0.7
-1
V
IS
-3
A
Ciss
2060
2600
pF
Coss
370
pF
Crss
295
pF
Rg
2.4
3.6
Qg
30
39
nC
Qgs
4.6
nC
Qgd
10
nC
tD(on)
11
ns
tr
9.4
ns
tD(off)
24
ns
tf
12
ns
trr
30
40
ns
Qrr
22
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/s
Drain-Source Breakdown Voltage
On state drain current
ID = -250A, VGS = 0V
VGS = -10V, VDS = -5V
VGS = -20V, ID = -12A
Reverse Transfer Capacitance
IF=-12A, dI/dt=100A/s
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
A
Gate Threshold Voltage
VDS = VGS ID = -250A
VDS = -30V, VGS = 0V
VDS = 0V, VGS = ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS = -6V, ID = -10A
IS = -1A,VGS = 0V
VDS = -5V, ID = -10A
VGS = -10V, ID = -12A
m
SWITCHING PARAMETERS
Gate Source Charge
Gate Drain Charge
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-12A
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.25,
RGEN=3
Turn-Off Fall Time
Turn-On DelayTime
VGS=0V, VDS=-15V, f=1MHz
Input Capacitance
Output Capacitance
Turn-On Rise Time
A: The value of R θJA is measured with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A = 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev10: Nov 2010
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4407A_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4407AL | 制造商:AOS 功能描述:MOSFET |
| AO4407B | 功能描述:MOSFET P-CH 30V 12A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:* 零件狀態(tài):過期 標(biāo)準(zhǔn)包裝:1 |
| AO4407BL | 功能描述:MOSFET P-CH 30V 12A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:* 零件狀態(tài):過期 標(biāo)準(zhǔn)包裝:1 |
| AO4407L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
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