- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36690 > AO4406L (ALPHA AND OMEGA SEMICONDUCTOR) 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | AO4406L |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | AO4406L |
AO4406
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
0.8
1
1.5
V
ID(ON)
60
A
11.5
14
TJ=125°C
16
19.2
13.5
16.5
m
19.5
26
m
gFS
25
38
S
VSD
0.83
1
V
IS
4.5
A
Ciss
1630
2300
pF
Coss
201
pF
Crss
142
200
pF
Rg
0.4
0.8
1.8
Qg
13.5
18
24
nC
Qgs
2.5
nC
Qgd
5.5
nC
tD(on)
4
6
ns
tr
5
7.5
ns
tD(off)
32
50
ns
tf
5
10
ns
trr
18.7
24
ns
Qrr
12.5
15
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=15V, f=1MHz
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.2,
RGEN=3
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=15V, ID=11.5A
Gate Source Charge
m
VGS=4.5V, ID=10A
IS=10A,VGS=0V
VDS=5V, ID=10A
VGS=2.5V, ID=8A
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
A
Gate Threshold Voltage
VDS=VGS ID=250A
VDS=30V, VGS=0V
VDS=0V, VGS= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/s
Drain-Source Breakdown Voltage
On state drain current
ID=250A, VGS=0V
VGS=4.5V, VDS=5V
VGS=10V, ID=12A
Reverse Transfer Capacitance
IF=10A, dI/dt=100A/s
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev9: May 2011
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO4407A | 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4409 | 15000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4411 | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4413 | 15000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4427 | 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4407 | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AO4407_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4407A | 功能描述:MOSFET P-CH -30V -12A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4407A_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4407AL | 制造商:AOS 功能描述:MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。