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參數(shù)資料
| 型號(hào)： | AO4406AL |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 13000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 168K |
| 代理商： | AO4406AL |
AO4406AL
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
Gate Threshold Voltage
1.5
1.9
2.5
V
ID(ON)
100
A
9.5
11.5
TJ=125°C
14
17
12.5
15.5
m
gFS
45
S
VSD
0.75
1
V
IS
4
A
Ciss
610
760
910
pF
Coss
88
125
160
pF
Crss
40
70
100
pF
Rg
0.8
1.6
2.4
Qg(10V)
11
14
17
nC
Qg(4.5V)
5
6.6
8
nC
Qgs
1.9
2.4
2.9
nC
Qgd
1.8
3
4.2
nC
tD(on)
4.4
ns
tr
9
ns
tD(off)
17
ns
tf
6
ns
trr
5.6
7
8
ns
Qrr
6.4
8
9.6
nC
Rev 1 : Jun-09
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
ID=250A, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=12A
Reverse Transfer Capacitance
IF=12A, dI/dt=500A/s
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
A
VDS=VGS ID=250A
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
RDS(ON)
Static Drain-Source On-Resistance
m
IS=1A,VGS=0V
VDS=5V, ID=12A
VGS=4.5V, ID=10A
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=15V, ID=12A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.25,
RGEN=3
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4407 | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AO4407_10 | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4407A | 功能描述:MOSFET P-CH -30V -12A 8-SOIC RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4407A_10 | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4407AL | 制造商:AOS 功能描述:MOSFET |
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