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參數(shù)資料
| 型號(hào)： | AO4405 |
| 廠商： | Alpha Industries, Inc. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:26; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:17-26 RoHS Compliant: No |
| 中文描述： | 的P -溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 114K |
| 代理商： | AO4405 |
AO4405, AO4405L
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3
nA
V
A
-1
-30
-1.8
40
55
65
9.5
-0.78
50
70
85
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
6
S
V
A
-1
-4.2
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge (10V)
700
112
78
10
840
pF
pF
pF
15
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
14.7
7.6
2
3.8
8.6
5
28.2
13.5
24
14.7
18
nC
nC
nC
nC
ns
ns
ns
ns
30
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=-15V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=2.5
,
R
GEN
=3
Turn-On DelayTime
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-6A
m
V
GS
=-4.5V, I
D
=-4A
V
DS
=-5V, I
D
=-6A
I
S
=-1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=6A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-6A, dI/dt=100A/
μ
s
I
D
=-250
μ
A, V
GS
=0V
I
F
=-6A, dI/dt=100A/
μ
s
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
≤
10s thermal resistance rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO4405L | Circular Connector; No. of Contacts:26; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:17-26 RoHS Compliant: No |
| AO4406 | N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| AO4408 | Circular Connector; No. of Contacts:26; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:17-26 RoHS Compliant: No |
| AO4408L | LJT 26C 26#20 SKT REAR WALL |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4405E | 功能描述:MOSFET P-CHANNEL 30V 6A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 零件狀態(tài):在售 FET 類型:P 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:6A（Ta） 驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）:4.5V，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:1.5V @ 250μA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:16nC @ 10V Vgs（最大值）:±20V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:495pF @ 15V FET 功能:- 功率耗散（最大值）:2.5W（Ta） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:45 毫歐 @ 6A，10V 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 供應(yīng)商器件封裝:8-SOIC 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 標(biāo)準(zhǔn)包裝:3,000 |
| AO4405L | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| AO4406 | 功能描述:MOSFET N-CH 30V 11.5A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4406A | 功能描述:MOSFET N-CH 30V 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO4406AL | 制造商:AOS 功能描述:MOSFET |
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