參數(shù)資料
型號: AO3409L
廠商: ALPHA
元件分類: MOSFETs
英文描述: P-Channel Enhancement Mode Field Effect Transistor
中文描述: 的P -溝道增強型場效應(yīng)晶體管
文件頁數(shù): 1/4頁
文件大?。?/td> 116K
代理商: AO3409L
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
70
100
63
Max
90
125
80
R
θ
JL
Junction and Storage Temperature Range
A
P
D
°C
1.4
1
-55 to 150
T
A
=70°C
I
D
-2.6
-2.2
-20
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum
-30
Units
V
V
Parameter
Drain-Source Voltage
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±20
Gate-Source Voltage
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
t
10s
R
θ
JA
AO3409
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -2.6 A (V
GS
= -10V)
R
DS(ON)
< 130m
(V
GS
= -10V)
R
DS(ON)
< 200m
(V
GS
= -4.5V)
General Description
The AO3409 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO3409 is Pb-free
(meets ROHS & Sony 259 specifications). AO3409L
is a Green Product ordering option. AO3409 and
AO3409L are electrically identical.
S
G
D
TO-236
(SOT-23)
Top View
G
D
S
Alpha & Omega Semiconductor, Ltd.
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