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參數(shù)資料
| 型號(hào)： | AND8116D |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Integrated Relay/Inductive Load Drivers for Industrial and Automotive Applications |
| 中文描述： | 綜合繼電器/工業(yè)和汽車應(yīng)用感性負(fù)載驅(qū)動(dòng)程序 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 90K |
| 代理商： | AND8116D |
AND8116/D
http://onsemi.com
2
Standard Discrete RELAY DRIVERS
For both type of applications industrial and automotive,
the most traditional and popular relay drivers are the ones
formed discretely with a bipolar transistor, two bias resistors
and a freewheeling diode. In some cases, it is required to
add extra components such as MOVs (metal oxide varistors)
and extra diodes to ensure proper protection. Figure 1 shows
a typical discrete relay driver with the extra protection
devices. Diode D1 provides reverse supply protection and
diode D2 provides a clamp function to suppress the voltage
spike generated by the relay’s coil during the turnoff
interactions (V = Ldi/dt). A power MOV device is used to
limit positive transients to within the bipolar transistor’s
breakdown voltage. The saturation voltage of the bipolar
transistor (typically over 1.0 V) causes high power
dissipation which in some cases eliminates the option to use
inexpensive surface mount package devices such as
SOT23 or smaller, therefore the need for bigger packages
such as TO220 is always present. The resulting discrete
circuit is expensive because it takes several components and
a big space in the PC board.
Figure 1. Typical Discrete Relay Driver
+12 V
VARISTOR
0
RELAY
D1
Q1
R2
R1
+5 V/3.3 V
D2
LOGIC
ON Semiconductor’s RELAY DRIVERS
The ON Semiconductor’s relay drivers portfolio is
divided in two main categories:
Industrial version (devices NUD3105, NUD3112)
Automotive version (device NUD3124)
Industrial Version
Figure 2 describes the industrial relay driver version
(devices NUD3105, NUD3112). This device integrates
several discrete components in a single SOT23 three
leaded surface mount package to achieve a simpler and more
efficient solution than the conventional discrete relay
drivers. The characteristics of the integrated devices are
listed below:
Nchannel FET 40 V, 500 mA
ESD protection Zener diodes (7.0 V)
Bias resistors (1.0 K
in the gate and 300 K
between gate and source)
Clamping protection Zener diodes (7.0 V for 5.0 V
relay’s coils, and 14 V for 12 V coils)
Figure 2. Industrial Relay Driver Description
(NUD3105 and NUD3112 Devices)
Drain (3)
1.0 k
300 k
Gate (1)
Source (2)
ESD
Zener
7 V
ESD
Zener
7 V
Clamp Zener
7 V or 14 V
Clamp Zener
7 V or 14 V
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