參數(shù)資料
型號： AN8022SB
廠商： PANASONIC CORP
元件分類： 穩(wěn)壓器
英文描述： AC-DC switching power supply control IC
中文描述： 1 A SWITCHING CONTROLLER, 225 kHz SWITCHING FREQ-MAX, PDSO16
封裝： 0.225 INCH, PLASTIC, SSOP-16
文件頁數(shù)： 13/16頁
文件大?。?/td> 119K
代理商： AN8022SB
Voltage Regulators
AN8022L, AN8022SB
13
I
Application Notes (continued)
[2] Operation descriptions (continued)
6. Timer latch (continued)
V
O
Power supply
output voltage
0
Power supply stop
Time
Power MOSFET
current
0
I
DS
Power supply stop
Time
TIM/OVP
terminal
voltage
0
V
OVP
Power supply stop
Time
OVP
V
TH
=
6 V (typ.)
Figure 8. Timer latch basic operation
7. Output Block
The AN8022L and AN8022SB employ the
output circuit using the totem pole (push-pull)
method, by which sink/source of current is per-
formed with the NPN transistor as shown in figure
9, in order to drive the power MOSFET at high
speed.
The maximum sink/source current is
±
0.1 A
(DC) and
±
1.0 A (peak). Even when the supply
voltage V
CC
is under the stop voltage, the sink
function works to ensure that the power MOSFET
be turned off.
For the current capability, the peak current is major concern, and the particularly large current is not required
normally: The power MOSFET which works as load on the output is capacitive load. Therefore, in order to drive
it at high speed, the large peak current is required. However, after charge/discharge particularly large current is not
required to keep that condition.
For the AN8022L or AN8022SB, capacitance value of the power MOSFET used is taking into account, and
the capability of peak value
±
1 A is ensured.
The parasitic LC of the power MOSFET may produce ringing which makes the output pin go under the GND
potential. When the decrease of the output pin becomes larger than the voltage drop of diode and its voltage
becomes negative, the parasitic diode consisting of the substrate and collector of the output NPN turns on. This
phenomenon may cause the malfunction of the device. In such a case, the Schottky barrier diode should be
connected between the output and GND.
Schottky barrier
diode
Figure 9
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