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參數(shù)資料
| 型號(hào)： | AN5001 |
| 英文描述： | Use of the VTO. rT on-state characteristic model |
| 中文描述： | 使用仇。反T的狀態(tài)特征模型 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | AN5001 |
2/5
www.dynexsemi.com
AN5001 Application Note
pass through 1/6I
T(AV)
and
π
I
T(AV)
and also
π
I
T(AV)
and 20 x I
T(AV)
.
4) As Fig 3. A tangential point constructed such that the value
of I
T(AV)
calculated from:-
I
T(AV)
= (–V
TO
±
÷
(V
TO
is the same as that calculated by more exacting methods. This
method is a variation of method 1). It has been used to
retrospectively calculate meaningful values of V
T0
and r
T
where
more accurate current rating data already exists.
2
+ 4*k
2
*r
T
*P)) / 2*k
2
*r
T
[3]
LIMITATIONS OF THE V
T0,
R
T
MODEL
Using any one of the four definitions gives the correct value of
the conduction losses at one or at most two points on the V
TM
vs I
curve, ie where the straight line meets the true curve. It can
be seen that depending on where a point is taken on the curve
the answers will be optimistic or pessimistic. Definitions 1, 2
and 4 give adequate accuracy up to 3 x I
T(AV)
.
For improved accuracy a mathematical model is needed which
approximates better to the true curve.
A FOUR COEFFICIENT MODEL
The GE four term curve-fit equation given above has been
shown to be a good isothermal approximation and is being
increasingly adopted by several manufacturers of power
semiconductors for inclusion in their datasheets. For the user,
the one problem with the equation
V
TM
= A + B*lnI + C*I + D*sqrt(I)
is that, when multiplied by the equation for the current, it is not
easily integratable to give the power loss. However, the equation
is solvable by numerical integration, now easily possible with
computers.
[4]
The following equation
for half sine waves
uses the A, B, C, D
coefficients used in the V
TM
equation above, their numerical
values depending on the device type.
P = [(A*(I/E) + B*(I/E)* ln(I/E))*F + B*(I/E)*G + C*(I/E)
2
*H+ D*(I/E)
3/2
*J]
[5]
where
I is the peak value of the half sine wave current.
The values of E, F, G, H and J depend on the conduction angle
and are given in the table 1, and
for Rectangular waves :
P = [ A + B*ln(I*360/
θ
) + C*(I*360/
θ
) + D*
÷
(I*360/
θ
) ]*(I*360/
θ
)]
[6]
where
I
is the average current
(not the peak current) and
θ
is
the conduction angle in degrees.
Dynex Semiconductor has determined the values of A, B, C and
D and these are given in the attached table 2.
I
T
I
T(AV)
V
T
V
TO
r
T
Fig.3
e
n
A
n
e
o
u
g
e
d
d
(
n
o
C
)
e
r
E
F
G
H
J
0
8
1
1
6
8
9
0
3
8
1
3
0
6
2
6
7
9
0
–
5
2
2
6
8
0
2
8
7
2
0
2
1
1
0
5
3
2
5
7
3
2
7
0
4
2
2
5
0
–
5
9
7
0
0
0
2
0
0
2
7
9
7
5
1
2
0
9
5
7
0
9
1
6
7
7
5
1
8
2
1
8
8
4
0
–
0
0
1
1
6
3
2
1
0
3
5
1
7
7
3
1
0
6
5
4
1
2
8
7
7
0
8
9
4
8
3
5
4
0
–
6
3
0
2
9
9
4
0
0
3
1
1
4
2
6
0
0
3
5
2
2
7
7
2
6
0
2
0
5
0
6
5
4
2
0
–
8
8
4
6
8
6
0
0
2
1
9
6
6
1
1
0
5
1
7
6
0
6
4
3
6
0
5
0
0
3
9
0
5
9
0
0
–
7
9
7
4
8
0
0
0
3
3
1
3
0
2
0
0
Table 1
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