
AN22011A
5
SDD00024AEB
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
FF relative gain record mode
Z
FFRE
G
EE
Record mode
2
6
0
2
dB
EE frequency characteristics
Pit high reflection ratio mode
V
48
: 1.5 kHz, 15 kHz Sine wave
3
0.5
dB
FF frequency characteristics
G
FF
Pit high reflection ratio mode
V
47
: 1.5 kHz, 15 kHz Sine wave
6
3
0.5
dB
Te stray light canceling operation
TOFS
Ram mode
Stray light canceling mode
0.4
0.5
0.6
ADIP gain
G
AD1
Record mode
Line double speed mode
24.0
27.0
30.0
dB
ADIP center frequency
F
AD1
Record mode
Line double speed mode
35.2
44.0
52.8
kHz
ADIP band width
F
AD1
Record mode
Line double speed mode
23.7
29.6
35.5
kHz
ADIP relative gain typical
speed mode
G
AD2
Record mode
Typical speed mode
3
0
3
dB
RF amplifier gain
groove mode
G
RFG
V
43
: 100 kHz Sine wave
Groove mode
19
22
25
dB
RF amplifier gain
pit low reflection ratio mode
G
RFPL
V
43
: 100 kHz Sine wave
Pit low reflection ratio mode
3
6
9
dB
RF amplifier gain
pit high reflection ratio mode
G
RFPH
V
43
: 100 kHz Sine wave
Pit high reflection ratio mode
11.5
8.5
5.5
dB
RF amplifier frequency characteristics
G
RFG
groove mode
V
43
: 5 MHz Sine wave
Groove mode
3
dB
RF amplifier frequency characteristics
G
RFPL
pit low reflection ratio mode
V
43
: 5 MHz Sine wave
Pit low reflection ratio mode
3
dB
RF amplifier frequency characteristics
G
RFPH
pit high reflection ratio mode
V
43
: 5 MHz Sine wave
Pit high reflection ratio mode
3
dB
EQ boost gain
G
EQ
V
7
: 400 kHz, 1.44 MHz Sine wave
V
8
=
V
REF
2.5
3.5
4.5
dB
AGC operation
V
OMRFV
I
AGC1
V
7
: 500 kHz Sine wave
V
7
: sin 500 mV[p-p], 720 kHz
V
8
=
V
REF
V
7
=
V
REF
, V
8
=
V
REF
V
7
=
V
REF
V
7
: 720 kHz AM modulation
Sine wave (1 kHz, 30%)
0.4
0.5
0.6
V[p-p]
AGC discharge current
140
110
80
μ
A
AGC charging current
I
AGC2
V
PE
V
PEAK
0.1
0.4
0.7
μ
A
EFM Peak peak detecting offset
200
0
200
mV
EFM Peak peak detecting level
80
110
140 mV[p-p]
EFM bottom detecting offset
V
BO
V
7
=
V
REF
V
7
: 720 kHz AM modulation
Sine wave (1 kHz, 30%)
200
20
0
200
mV
EFM bottom detecting relative level
V
BOTM
0
20
mV[p-p]
3T element envelope
extracting level
V
3TMON
V
7
: 720 kHz AM modulation
Sine wave (5 kHz, 5%)
125
185
245 mV[p-p]
■
Electrical Characteristics at T
a
=
25°C (continued)