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參數(shù)資料
| 型號(hào)： | AN1F4N |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43B, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 125K |
| 代理商： | AN1F4N |
APTCV50H60T3G
A
P
T
C
V50H
60
T
3G
–
Re
v0
June
,2007
www.microsemi.com
2-9
All ratings @ Tj = 25°C unless otherwise specified
1. Top switches
1.1 Top Trench + Field Stop IGBT characteristics
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
80
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
176
W
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C
100A @ 550V
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
A
Tj = 25°C
1.5
1.9
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 50A
Tj = 150°C
1.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 600A
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
3150
Coes
Output Capacitance
200
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
95
pF
Td(on)
Turn-on Delay Time
110
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
200
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
40
ns
Td(on)
Turn-on Delay Time
120
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
250
Tf
Fall Time
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
60
ns
Tj = 25°C
0.3
Eon
Turn-on Switching Energy
Tj = 150°C
0.43
mJ
Tj = 25°C
1.35
Eoff
Turn-off Switching Energy
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
Tj = 150°C
1.75
mJ
RthJC
Junction to Case Thermal resistance
0.85
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AN1F4Z-Q | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AN1F4Z-P | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AN1F4Z-K | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AN1F4Z-A | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AN1F4Z | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AN1F4Z | 制造商:NEC 制造商全稱:NEC 功能描述:COMPOUND TRANSISTOR |
| AN1L3M | 制造商:NEC 制造商全稱:NEC 功能描述:on-chip resistor PNP silicon epitaxial transistor |
| AN1L3N | 制造商:Renesas Electronics Corporation 功能描述:Trans Digital BJT PNP 50V 100mA 3-Pin TO-92 |
| AN1L3Z | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON TRANSISTOR |
| AN1L4L | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON TRANSISTOR |
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