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| 型號： | AN1768 |
| 英文描述： | ADMISSIBLE AVALANCHE POWER OF SCHOTTKY DIODES |
| 中文描述： | 可接納的雪崩功率肖特基二極管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 45K |
| 代理商： | AN1768 |
AN1768 - APPLICATION NOTE
2/2
2. DESIGN EXAMPLE
Let us consider the use of a STPS20H100CT (two
10A, 100V ST Schottky diodes in TO-220 pack-
age) used in a flyback converter (figure 4).
In a
typical worst-case situation
, the application
conditions are:
n
Operating junction temperature of the Schottky
diode:
Tj = 100°C
n
Pulse duration of the avalanche current:
tp = 10ns
n
Avalanche energy by pulse through the two
diodes connected in parallel:
V
P
= -130V, I
AR
= -1.5A, tp = 10ns
E
AP
= 1.95μJ
Table 1 gives:
P
ARM
(1μs,25°C)
STPS20H100CT
=10.8kWperdiode
Figure 2 gives:P
tp
tp
(
C
C
°
P
ARM
ARM
(
,
)
,
)
.
100
25
045
°
=
P
ARM
(1μs,100°C) = P
ARM
(1μs,25°C) x 0.45
P
ARM
(1μs,100°C) = 4.86 kW
Fig.3 gives:P
n, )
, )
μ
P
ARM
j
ARM
(
(
10
1
1
=
P
ARM
(10ns,100°C) = P
ARM
(1μs,100°C)
P
ARM
(10ns,100°C) = 4.86 kW
Finally,
E
ARM
(10ns,100°C) = P
ARM
(10ns,100°C)x10ns
The maximum admissible avalanche energy of the
STPS20H100CT at 10ns and 100°C is:
E
ARM
(10ns,100°C) = 48.6μJ per diode
Consequently,
as
the
E
ARM
(10ns,100°C) (per diode) is higher than E
AP
measured through the two diodes connected in
parallel (48.6μJ > 1.95μJ), the STPS20H100CT
will withstand the avalanche energy generated by
the converter.
guaranteed
value
Vout
Idiode
Vdiode
Vin
Fig. 4:
Topology of a flyback converter.
I
AR
V
R
tp
I
Diode
corresponding energy
in the avalanche area
Fig. 5:
Current and voltage waveforms through
the two diodes.
(I
AR
= repetitive avalanche current)
Figure 5 shows the corresponding current and
voltage waveforms through the two diodes.
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