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參數(shù)資料
| 型號： | AMS236AN |
| 廠商： | Advanced Monolithic Systems, Inc. |
| 英文描述： | VOLTAGE REFERENCE DIODE |
| 中文描述： | 電壓基準(zhǔn)二極管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 39K |
| 代理商： | AMS236AN |
Advanced Monolithic Systems, Inc.
6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140
AMS236/AMS336
ABSOLUTE MAXIMUM RATINGS
(Note 1)
Reverse Current
Forward Current
Operating Temperature Range
AMS236
AMS336
15mA
10mA
Storage temperature
Soldering information
TO-92 package: 10 sec.
SOIC package: Vapor phase (60 sec)
Infrared (15 sec.)
-55
°
C to +150
°
C
260
°
C
215
°
C
220
°
C
-25
°
C to +85
°
C
0
°
C to +70
°
C
ELECTRICAL CHARACTERISTICS
Electrical Characteristics at I
R
= 1 mA, and T
A
= +25°C unless otherwise specified.
Parameter
Conditions
AMS236A
Min Typ Max
AMS236B
Min Typ Max
Units
Reverse Breakdown Voltage
2.475
2.500
2.525
2.450
2.500
2.550
V
Reverse Dynamic Impedance
f = 100Hz
0.2
0.4
0.6
1
0.2
0.4
0.6
1
Reverse Breakdown Voltage
Change with current
400
μ
A
≤
I
R
≤
10mA
2.6
3
6
10
2.6
3
6
10
mV
Temperature Stability
-25
°
C
≤
T
A
≤
+85
°
C
3.5
9
3.5
9
mV
Long Term Stability (Note 4)
T
A
=25°C±0.1°C
T = 1000 Hr
20
20
ppm
ELECTRICAL CHARACTERISTICS
Electrical Characteristics at I
R
= 1 mA, and T
A
= +25°C unless otherwise specified.
Parameter
Conditions
AMS336A
Min Typ Max
AMS336B
Min Typ Max
Units
Reverse Breakdown Voltage
2.450
2.500
2.550
2.400
2.500
2.600
V
Reverse Dynamic Impedance
f = 100Hz
0.2
0.4
1.0
1.4
0.2
0.4
1.0
1.4
Reverse Breakdown Voltage
Change with current
400
μ
A
≤
I
R
≤
10mA
2.6
3
10
12
2.6
3
10
12
mV
Temperature Stability
0
°
C
≤
T
A
≤
70
°
C
1.8
6
1.8
6
mV
Long Term Stability (Note 4)
T
A
=25°C±0.1°C
T = 1000 Hr
20
20
ppm
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics
.
The
guaranteed specifications apply only for the test conditions listed.
Note 2:
For elevated temperature operation, T
j
max is:
AMS236 +125°C
AMS336 +100°C
Thermal Resistance
JA
(junction to ambient)
170°C/W (0.125” leads)
TO-92
SO-8
165°C/W
Note 3:
Parameters identified with
boldface type
apply at temperature extremes. All other numbers apply at T
A
= T
J
= 25°C.
Note 4:
Temperature stability for the AMS236/336 family is guaranteed by design. Design limits are guaranteed (but not 100% production tested) over the
specified temperature and supply voltage ranges. These limits are not used to calculate outgoing quality levels. The average temperature coefficient is defined as the
maximum deviation of reference voltage at all measured temperatures between the operating T
MAX and
T
MIN
, divided by T
MAX
- T
MIN
.
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| AMS236AS | VOLTAGE REFERENCE DIODE |
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| AMS336AN | VOLTAGE REFERENCE DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
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| AMS236AS | 制造商:ADMOS 制造商全稱:ADMOS 功能描述:VOLTAGE REFERENCE DIODE |
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| AMS236BN | 制造商:ADMOS 制造商全稱:ADMOS 功能描述:VOLTAGE REFERENCE DIODE |
| AMS236BS | 制造商:ADMOS 制造商全稱:ADMOS 功能描述:VOLTAGE REFERENCE DIODE |
| AMS2406 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Subscriber Line Interface Circuit |
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