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參數(shù)資料
| 型號： | AMS232 |
| 廠商： | Advanced Monolithic Systems, Inc. |
| 英文描述： | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | NPN硅高頻晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 23K |
| 代理商： | AMS232 |
Advanced Monolithic Systems, Inc.
6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140
AMS232
ELECTRICAL CHARACTERISTICS
Electrical Characteristics at T
C
= 25
°
C, unless otherwise specified
AMS232
Typ
Parameter
Symbol
Conditions
Min
Max
Units
Off Characteristics
Collector - Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
120
V
Collector - Base Breakdown Voltage
V
(BR)CBO
I
C
= 100
μ
A, I
B
= 0
120
V
Emitter - Base Breakdown Voltage
V
(BR)EBO
I
E
= 100nA, I
C
= 0
3
V
Collector Cutoff Current
I
CES
V
CE
= 110V, V
BE
= 0
100
nA
On Characteristics
DC Current Gain
H
FE
I
C
= 50mA, V
CE
= 15V
50
-
Dynamic Characteristics
Output Capacitance
C
OB
V
CB
= 10V, IE = 0, f = 1MHz
2.5
pF
Collector Base Capacitance
C
CB
V
CB
= 10V, IE = 0, f = 1MHz
1.8
pF
Input Capacitance
C
IB
V
EB
= 3V, f = 1MHz
9
pF
Transistor Frequency
f
T
V
CE
= 15V, I
C
= 50mA
1.2
GHz
TYPICAL PERFORMANCE CHARACTERISTICS
0
3
6
9
27
0
8
4
Junction Capacitance vs Voltage
30
COLLECTOR BASE VOLTAGE (V)
C
2
10
6
0
30
60
400
1400
Gain Bandwidth Product vs
Collector Current
90
150
600
800
1200
G
12 15 18 21 24
0
1
0
16
8
Input Capacitance vs Voltage
5
EMITTER BASE VOLTAGE (V)
C
4
20
12
2
3
4
1000
COLLECTOR CURRENT (mA)
C
OB
C
CB
C
IB
15
45
75
105
f =250MHz
V
CE
= 25V
120 135
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