參數(shù)資料
型號(hào): AMMP-6430-TR1G
元件分類: 放大器
英文描述: 27000 MHz - 34000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: SMT, 8 PIN
文件頁(yè)數(shù): 3/10頁(yè)
文件大小: 270K
代理商: AMMP-6430-TR1G
2
Absolute Maximum Ratings [1]
Symbol
Parameters [1]
Units
Value
Notes
Vd
Positive Supply Voltage
V
6
2
Vg
Gate Supply Voltage
V
-3 to 0.5
Idq
Drain Current
mA
900
PD
Power Dissipation
W
5.5
2, 3
Pin
CW Input Power
dBm
23
2
Tch, max
Maximum Operating Channel Temp.
°C
+155
4, 5
Tstg
Storage Case Temp.
°C
-65 to +155
Tmax
Maximum Assembly Temp (20 sec max)
°C
+260
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. When operate at this condition with a base plate temperature of 85
°C, the median time to failure (MTTF) is signicantly reduced.
4. These ratings apply to each individual FET
5. Junction operating temperature will directly aect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
DC Specications/ Physical Properties [6]
Symbol
Parameters and Test Conditions
Units
Value
Idq
Drain Supply Current (Vd=5 V, Vg set for Id Typical)
mA
650
Vg
Gate Supply Operating Voltage (Id(Q) = 650 (mA))
V
-1.1
RθJC
Thermal Resistance[6] (Channel-to-Base Plate)
°C/W
16.8
Tch
Channel Temperature
°C
139.6
Notes:
6. Assume SnPb soldering to an evaluation RF board at 85 °C base plate temperatures. Worst case is at saturated output power when DC power
consumption rises to 5.24W with 0.9W RF power delivered to load. Power dissipation is 4.34W and the temperature rise in the channel is 72.9 °C. In this
condition, the base plate temperature must be remained below 82.1 °C to maintain maximum operating channel temperature below 155 °C.
AMMP-6430 RF Specications [1, 2, 3, 4]
TA= 25°C, Vdd = 5.0 V, Idq =650 mA, Vg = -1.1V, Zo=50Ω
Symbol
Parameters and Test Conditions
Units
Minimum
Typical
Maximum
Freq
Operational Frequency
GHz
27
34
Gain
Small-signal Gain[3, 4] Freq = 27 GHz
dB
16
20
P-1dB
Output Power at 1dB[3] Gain Compression
dBm
26
27
OIP3
Output Third Order Intercept Point
dBm
35
RLin
Input Return Loss
dB
10
RLout
Output Return Loss
dB
10
Isolation
Reverse Isolation
dB
43
Notes:
1. Small/Large -signal data measured in packaged form on a 2.4-mm connecter based evaluation board at TA = 25°C.
2. This nal package part performance is veried by a functional test correlated to actual performance at one or more frequencies
3. Specications are derived from measurements in a 50Ω test environment.
4. Pre-assembly into package performance veried 100% on-wafer published specications at Frequencies=27, 30, and 32GHz
5. The Gain and P1dB tested at 27GHz guaranteed with measurement accuracy ± 1.5 dB for gain and ±1.6dB for P1dB.
相關(guān)PDF資料
PDF描述
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