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參數(shù)資料
| 型號(hào)： | AMMC-5026 |
| 英文描述： | 2-35 GHz GaAs MMIC Traveling Wave Amplifier |
| 中文描述： | 2-35千兆赫砷化鎵單片行波放大器 |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大小： | 179K |
| 代理商： | AMMC-5026 |
7
Biasing and Operation
AMMC-5026 is biased with a
single positive drain supply (V
d
)
and a negative gate supply (V
g1
).
The recommended bias condi-
tions for the HMMC-5026 is V
dd
=
7V and I
dd
= 150 mA for best
overall performance. Open
circuit is the default setting for
the V
g2
biasing.
Figure 17 shows a typical bond-
ing configuration for the 2 to
35 GHz operations. In this case,
auxiliary drain and V
g1
capaci-
tors (>0.5
μ
F) are used for low
frequency (below 2 GHz) perfor-
mance. Input and output RF
ports are DC coupled; therefore,
DC decoupling capacitors are
required if there are DC paths.
The auxiliary gate and drain
contacts are used for low fre-
quency performance extension
below 1 GHz. When used, these
contacts must be AC coupled
only. (Do not attempt to apply
bias to these pads.)
Ground connections are made
with plated through-holes to the
backside of the device.
Assembly Techniques
The chip should be attached
directly to the ground plane
using either a fluxless AuSn
solder preform or electrically
conductive epoxy
[1]
. For conduc-
tive epoxy, the amount should be
just enough to provide a thin
fillet around the bottom perim-
eter of the die. The ground plane
should be free of any residue that
may jeopardize electrical or
mechanical attachment. Caution
should be taken to not exceed the
Absolute Maximum Rating for
assembly temperature and time.
Thermosonic wedge bonding is
the preferred method for wire
attachment to the bond pads. The
RF connections should be kept as
short as possible to minimize
inductance. Gold mesh
[2]
or
double-bonding with 0.7 mil gold
wire is recommended.
Mesh can be attached using a
2 mil round tracking tool and a
tool force of approximately
22 grams with an ultrasonic
power of roughly 55 dB for a
duration of 76
±
8 mS. A guided
wedge at an ultrasonic power
Figure 15. AMMC-5026 Schematic.
level of 64 dB can be used for the
0.7 mil wire. The recommended
wire bond stage temperature is
150
±
2
°
C.
The chip is 100 mm thick and
should be handled with care.
This MMIC has exposed air
bridges on the top surface.
Handle at edges or with a custom
collet (do not pick up die with
vacuum on die center.)
This MMIC is also static sensitive
and ESD handling precautions
should be taken.
For more information, see
Agilent Application Note 54
“
GaAs MMIC ESD, Die Attach
and Bonding Guidelines.
”
Notes:
1. Ablebond 84-1 LM1 silver
epoxy is recommended.
2. Buckbee-Mears Corporation,
St. Paul, MN, 800-262-3824.
Vd
Aux Vd
RF Output
Aux Vg2
Aux Vg1
RF Input
Vg1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AMMC-5026_08 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:2-35 GHz GaAs MMIC Traveling Wave Amplifier |
| AMMC-5026-W10 | 功能描述:射頻放大器 Amplifier GaAs MMIC TWA RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMC-5026-W50 | 功能描述:射頻放大器 Amplifier GaAs MMIC TWA RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMC-5033 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:17.7 - 32 GHz Power Amplifier |
| AMMC-5033-W10 | 功能描述:射頻放大器 Amp GaAs MMIC RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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